NXH80B120MNQ0: Full SiC MOSFET Module, Two Channel Full SiC Boost, 1200 V, 80 mohm SiC MOSFET + 1200 V, 20 A SiC Diode

Datasheet: Dual Boost Power Module
Rev. P1 (653kB)
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The NXH80B120MNQ0 is a power integrated module (PIM) containing a dual full SiC boost stage consisting of two 80mohm/1200V SiC MOSFETs and two 20A/1200V SiC diodes. Two additional 30A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
Features   Benefits
     
  • SiC MOSFET Specification: 80 mΩ 1200 V
 
  • Fastest switching speeds for compact inverter solution
  • 30 A / 1600 V Bypass Diodes
 
  • Low VF bypass diodes for excellent efficiency in bypass mode
  • SiC Rectifier Specification: VF = 1.4 V
 
  • SiC Diode for high speed switching
  • Solderable Pins
 
  • Easy mounting
  • Thermistor
   
Applications   End Products
  • Solar Inverter Boost Stage
 
  • Solar Inverter
  • UPS
  • Energy Storage Systems
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NXH80B120MNQ0SNG Active
Pb-free
Halide free
NXH80B120MNQ0, Nickel-plated DBC Q0 180AJ NA BTRAY 24 $41.5181
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Configuration
VBR Max (V)
RDS(on) Typ (mΩ)
Application
Package Type
NXH80B120MNQ0SNG  
 $41.5181 
Pb
H
 Active   
Two Channel Boost
1200
80
Solar Inverter, Energy Infrastructure
Q0
Case Outlines
180AJ   
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