Si/SiC Hybrid Modules | NXH240B120H3Q1

Power Integrated Module (PIM) 3-channel 1200 V IGBT + SiC Boost, 80 A IGBT and 20 A SiC diode

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Overview

The NXH240B120H3Q1PG is a 3-channel 1200 V IGBT + SiC Boost module. Each channel consists of a fast switching 80 A IGBT, a 20 A SiC diode, a bypass diode and an IGBT protection diode.  The module contains an NTC thermistor.

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  • 1200 V Fast Switching IGBTs
  • 1200 SiC Diodes
  • Low Vf bypass diodes
  • Press-fit pins

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NXH240B120H3Q1PG

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Active

CAD Model

Pb

A

H

P

Q1

180AX

NA

0

BTRAY

21

Y

3 Channel Boost

1200

80

1.65

1.48

$66.9859

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NXH240B120H3Q1SG

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Obsolete

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CAD Model

Pb

A

H

P

Q1

180AD

NA

-

BTRAY

21

N

3 Channel Boost

1200

80

1.65

1.48

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: NXH240B120H3Q1PG

Equivalent to wafer fab process: SIC

Product Technology

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Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

SIC

0

3855921070

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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