Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.

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Overview

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • MPPT Boost Stage
  • Battery Charger Boost Stage
  • Solar Inverters
  • Energy Storage Systems
  • IGBT Specifications: VCE(sat) = 1.77 V, ESW = 2200 uJ
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
  • SiC Rectifier Specification: VF = 1.44 V
  • Solder pin and press-fit pin options available

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CAD Models

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Package Type

Case Outline

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Configuration

VBR Max (V)

Rated Current (A)

VCE(sat) Typ (V)

VF Typ (V)

Reference Price

NXH100B120H3Q0PG

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Active

CAD Model

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$47.1372

More Details

NXH100B120H3Q0PTG

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Active

CAD Model

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$47.1372

More Details

NXH100B120H3Q0SG

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Active

CAD Model

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$47.1372

More Details

NXH100B120H3Q0STG

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Active

CAD Model

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$47.1372

More Details

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