Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode.

Active

Overview

The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.

  • MPPT Boost Stage
  • Battery Charger Boost Stage

  • Solar Inverters
  • Energy Storage Systems

  • IGBT Specifications: VCE(sat) = 1.77 V, ESW = 2200 uJ
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
  • SiC Rectifier Specification: VF = 1.44 V
  • Solder pin and press-fit pin options available

Product Resources

Product services, tools and other useful resources related to NXH100B120H3Q0

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

4

Share

Product Groups:

Orderable Parts:

4

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Configuration

VBR Max (V)

Rated Current (A)

VCE(sat) Typ (V)

VF Typ (V)

Reference Price

NXH100B120H3Q0PG

Loading...

Active

CAD Model

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$47.1372

More Details

NXH100B120H3Q0PTG

Loading...

Active

CAD Model

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$47.1372

More Details

NXH100B120H3Q0SG

Loading...

Active

CAD Model

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$47.1372

More Details

NXH100B120H3Q0STG

Loading...

Active

CAD Model

Pb

A

H

P

Q0

NA

0

BTRAY

24

Y

Dual Boost

1200

50

1.77

1.44

$47.1372

More Details

Show More

1-25 of 25

Products per page

Jump to :

Product Support

If you're interested to learn about this onsemi product, contact sales by filling out the form below.