NXH80B120L2Q0: Power Integrated Module, Dual Boost, 1200 V, 40 A IGBT + 1200 V, 30 A Si Diode

Datasheet: Q0 - Dual Boost Power Module
Rev. 0 (261kB)
Product Overview
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The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 30A/1200V silicon diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
Features   Benefits
  • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2830 uJ
  • Fast IGBT with low VCE(SAT) for high efficiency
  • 25 A / 1600 V Bypass and Anti−parallel Diodes
  • Low VF bypass diodes for excellent efficiency in bypass mode
  • Si Rectifier Specification: VF = 2.4 V, IRRM = 53 A
  • Si Diode for moderate speed switching
  • Solderable Pins
  • Easy mounting
  • Dual Boost 40 A / 1200 V IGBT + Si Rectifier Module
  • Thermistor
Applications   End Products
  • Solar Inverter Boost Stage
  • Solar Inverter
  • UPS
Technical Documentation & Design Resources
Application Notes (1) Package Drawings (1)
Data Sheets (1) Videos (1)
Budgetary Price/Unit
Case Outline
NXH80B120L2Q0SNG Obsolete
Halide free
NXH80B120L2Q0, Nickel-plated DBC Q0 180AJ NA BTRAY 24  
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