IGBTs | SGF5N150UF

IGBT, Discrete, High Performance

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CAD Model

Overview

ON Semiconductor’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.

  • Other Industrial
  • High Speed Switching
  • Low Saturation Voltage : V CE(sat) = 4.7 V @ I C = 5A
  • High Input Impedance

Material Composition

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Pricing ($/Unit)

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SGF5N150UFTU

Last Shipments

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

360

N

1500

10

4.7

-

0.1

0.19

-

-

30

-

-

62.5

No

Price N/A

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