IGBTs | SGF5N150UF

IGBT, Discrete, High Performance

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Overview

ON Semiconductor’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.

  • Other Industrial
  • High Speed Switching
  • Low Saturation Voltage : V CE(sat) = 4.7 V @ I C = 5A
  • High Input Impedance

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

SGF5N150UFTU

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Last Shipments

CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

360

N

-

1500

10

4.7

-

0.1

0.19

-

-

30

-

-

62.5

No

Price N/A

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