IGBTs | SGF5N150UF

IGBT, Discrete, High Performance

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Datasheet

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Overview

ON Semiconductor’s Insulated Gate Bipolar Transistor (IGBT) provides low conduction and switching losses. SGF5N150UF is designed for the switching power supply applications.

  • Other Industrial

  • High Speed Switching
  • Low Saturation Voltage : V CE(sat) = 4.7 V @ I C = 5A
  • High Input Impedance

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

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Co-Packaged Diode

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SGF5N150UFTU

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CAD Model

Pb

A

H

P

TO-3PF-3L

340AH

NA

0

TUBE

360

N

-

1500

10

4.7

-

0.1

0.19

-

-

30

-

-

62.5

No

Price N/A

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Reliability Data

Die Related Summary Data

Device: SGF5N150UFTU

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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