IGBT 1200V 25A FS2 bare die

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 10 µs Short Circuit Capability
  • These are Pb−Free Devices

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2

Product

Status

CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTD23T120F2SWK

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Last Shipments

CAD Model

Pb

A

H

P

-

-

NA

0

PLRNG

1

N

-

1200

-

1.9

-

-

-

-

-

-

10

-

-

-

Price N/A

More Details

NGTD23T120F2WP

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Last Shipments

CAD Model

Pb

A

H

P

-

-

NA

0

WJAR

1

N

-

1200

-

1.9

-

-

-

-

-

-

10

-

-

-

Price N/A

More Details

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