IGBTs | NGTD13T65F2

IGBT, 650V 30A FS2 bare die

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop II Trench construction, and provides superiorperformance in demanding switching applications, offering both lowon state voltage and minimal switching loss.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 10 µs Short Circuit Capability
  • These are Pb−Free Devices

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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NGTD13T65F2WP

Active

Pb

A

H

P

-

-

NA

0

PLRNG

1

N

650

-

1.6

-

-

-

-

-

-

5

-

-

-

$0.8345

More Details

NGTD13T65F2SWK

Last Shipments

Pb

A

H

P

-

-

NA

0

PLRNG

1

N

650

-

1.6

-

-

-

-

-

-

5

-

-

-

Price N/A

More Details

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