IGBTs | NGTB50N60S

IGBT 600V 50A Welding

Obsolete

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.

  • Inverter Welding

  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Low Gate Charge
  • Soft, Fast Free Wheeling Diode

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

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Co-Packaged Diode

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NGTB50N60SWG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

600

50

2.2

1.2

0.6

-

376

22

135

-

-

250

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: NGTB50N60SWG

Equivalent to wafer fab process: IGN IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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