IGBT, 600V 50A FS2 Low VCEsat

Last Shipments

Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.

  • Motor Drive Inverters
  • Industrial Switching
  • Welding

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 s Short−Circuit Capability
  • These are Pb−Free Devices

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CAD Models

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Case Outline

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MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB50N60L2WG

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Last Shipments

CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

-

600

50

1.5

1.7

0.6

0.8

67

7.4

310

5

-

500

Yes

Price N/A

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