IGBTs | NGTB50N60L2

IGBT, 600V 50A FS2 Low VCEsat

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.

  • Motor Drive Inverters
  • Industrial Switching
  • Welding

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • 5 s Short−Circuit Capability
  • These are Pb−Free Devices

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

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Irr Typ (A)

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Co-Packaged Diode

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NGTB50N60L2WG

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Similar Products
CAD Model

Pb

A

H

P

TO-247

NA

0

TUBE

30

N

-

600

50

1.5

1.7

0.6

0.8

67

7.4

310

5

-

500

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: NGTB50N60L2WG

Equivalent to wafer fab process: IGN IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGN IGBT

12

24556821265

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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