IGBTs | NGTB40N120S3

IGBT, 1200V, 40A Low VF FSIII

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringlow switching losses. The IGBT is well suited for applications thatrequire fast switching IGBT with low VF diodes, e.g. phase−shifted fullbridge, etc. Incorporated into the device is a free wheeling diode with alow forward voltage.

  • Welding
  • Uninterruptible Power Inverter Supplies (UPS)
  • Motor Control
  • Industrial
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Low VF Reverse Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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Package Type

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MSL Type

MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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NGTB40N120S3WG

Last Shipments

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

1200

40

1.7

2

1.1

2.2

256

19

212

-

-

454

Yes

Price N/A

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