IGBTs | NGTB40N120S3

IGBT, 1200V, 40A Low VF FSIII

Obsolete

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringlow switching losses. The IGBT is well suited for applications thatrequire fast switching IGBT with low VF diodes, e.g. phase−shifted fullbridge, etc. Incorporated into the device is a free wheeling diode with alow forward voltage.

  • Welding
  • Uninterruptible Power Inverter Supplies (UPS)
  • Motor Control

  • Industrial

  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Low VF Reverse Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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V(BR)CES Typ (V)

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NGTB40N120S3WG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

1200

40

1.7

2

1.1

2.2

256

19

212

-

-

454

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: NGTB40N120S3WG

Equivalent to wafer fab process: HVFET

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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