NGTB40N120L3: IGBT, Ultra Field stop - 1200V 40A, Low VCEsat

Datasheet: IGBT - Ultra Field Stop
Rev. 3 (214kB)
Product Overview
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Product Change Notification
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for motor driver applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.
Features
 
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for Low VCEsat
  • These are Pb−Free Devices
Applications   End Products
  • Motor Drive Inverter
  • Industrial Switching
  • Welding
 
  • Industrial
Technical Documentation & Design Resources
Data Sheets (1)  
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NGTB40N120L3WG Lifetime
Pb-free
Halide free
NGTB40N120L3 TO-247 NA Tube 30 $3.4962
Market Leadtime (weeks) : Contact Factory
Avnet   (2020-08-19 00:00) : <100
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