IGBT, 650V 30A FS2 Induction Heating

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss. The IGBT iswell suited for half bridge resonant applications. Incorporated into thedevice is a soft and fast co−packaged free wheeling diode with a lowforward voltage.

  • Inductive Heating
  • Soft Switching
  • Extremely Efficient Trench with Fieldstop Technology
  • Low Switching Loss Reduces System Power Dissipation
  • Optimized for Low Losses in IH Cooker Application
  • TJmax = 175°C
  • Soft, Fast Free Wheeling Diode

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CAD Models

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Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB30N65IHL2WG

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Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

650

30

1.7

1.1

0.2

-

430

35

135

-

-

219

Yes

Price N/A

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