IGBTs | NGTB30N60IHLWG

IGBT, Field Stop (FS), 30 A, 600 V

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.

  • Half Bridge IH

  • Inductive Heating Hobs

  • Low Saturation Voltage using Trench with Fieldstop Technology
  • Low Switching Loss

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NGTB30N60IHLWG

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Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340AL

NA

0

TUBE

30

N

-

600

30

1.8

1.2

0.28

-

400

23

130

-

-

250

Yes

Price N/A

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