IGBT, 1350V 30A FS2-RC Induction Heating

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications.

  • Inductive Heating
  • Extremely Efficient Trench with Fieldstop Technology
  • Optimized for Low Case Temperature in IH Cooker Applications
  • Reliable and Cost Effective Single Die Solution

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

NGTB30N135IHRWG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

30

N

-

1350

30

2.3

2.1

0.85

-

-

-

234

-

-

394

Yes

Price N/A

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