NGTB20N120L: IGBT 1200V 20A FS1 Gen Mkt

Datasheet: IGBT
Rev. 2 (172.0kB)
Product Overview
View Material Composition
Product Change Notification
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.
Features   Benefits
     
  • Low Saturation Voltage using Trench with Fieldstop Technology
 
  • Low Conduction Loss
  • Low Switching Loss
 
  • Low Switching Loss
Applications   End Products
  • Industrial Switching
 
  • Inverter Welding Machiines
  • Microwave Ovens
Technical Documentation & Design Resources
Reference Manuals (1) Package Drawings (1)
Data Sheets (1)  
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
NGTB20N120LWG Obsolete
Pb-free
NGTB20N120L TO-247-3 340L-02 NA Tube 30  
Market Leadtime (weeks) : Contact Factory
Case Outlines
340L-02   
Application
Diagram - Block
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