IGBTs | HGTG30N60B3D

600V, PT IGBT

Obsolete

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Overview

The HGTG30N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053.The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.Formerly Developmental Type TA49172.

  • Other Industrial

  • 60A, 600V, TC = 25°C
  • 600V Switching SOA Capability
  • Typical Fall Time: 90ns at TJ = 150°C
  • Short Circuit Rating
  • Low Conduction Loss
  • Hyperfast Anti-Parallel Diode

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HGTG30N60B3D

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

30

1.45

-

-

-

45

-

-

-

-

-

Yes

Price N/A

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Reliability Data

Die Related Summary Data

Device: HGTG30N60B3D

Equivalent to wafer fab process: 2F,3B

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

2F,3B

0

552010123

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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