IGBT, Ultra Field Stop -1200V 60A

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

  • Solar Inverter
  • EV charging station
  • Industrial
  • Extremely Efficient Trench with Ultra Field Stop Technology
  • TJmax = 175°C
  • Soft Fast Reverse Recovery Diode
  • Optimized for High Speed Switching
  • These are Pb−Free Devices

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Co-Packaged Diode

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FGY60T120SQDN

Active

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

Y

1200

60

1.7

-

-

-

-

-

-

-

-

-

-

$5.9797

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