IGBT, Ultra Field Stop

Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft and fast co−packaged free wheeling diode with a low forwardvoltage.

  • Solar inverterUPSWelding

  • Extremely Efficient Trench with Field Stop Technology• TJmax = 175°C• Soft Fast Reverse Recovery Diode• Optimized for High Speed Switching• These are Pb−Free Devices

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH40T120SQDNL4

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Active

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

Y

FS7

1200

40

1.78

3.4

1.1

2.7

166

9

221

0

-

227

Yes

$4.9141

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