IGBT, Ultra Field Stop

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Ultra Field Stop Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on−state voltage and minimal switching loss. The IGBT iswell suited for UPS and solar applications. Incorporated into the deviceis a soft and fast co−packaged free wheeling diode with a low forwardvoltage.

  • Solar inverterUPSWelding
  • Extremely Efficient Trench with Field Stop Technology• TJmax = 175°C• Soft Fast Reverse Recovery Diode• Optimized for High Speed Switching• These are Pb−Free Devices

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CAD Models

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

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Co-Packaged Diode

Reference Price

FGH40T120SQDNL4

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Active

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

Y

FS7

1200

40

1.78

3.4

1.1

2.7

166

9

221

0

-

227

Yes

$4.9141

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