IGBT, 650 V, 30 A Field Stop Trench

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Overview

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance only for welder application where low conduction and switching losses are essential.

  • Maximum Junction Temperature : TJ = 175°C
  • Positive Temperaure Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.8 V(Typ.) @ IC = 30 A
  • 100% of the Parts Tested for ILM(1)
  • High Input Impedance
  • Fast Switching
  • Tighten Parameter Distribution
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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FGA6530WDF

Last Shipments

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

650

30

1.8

1.7

0.162

0.96

81

-

37.4

-

-

176

Yes

Price N/A

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