FGA40T65SHDF

IGBT, 650 V, 40 A Field Stop Trench

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CAD Model

Overview

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3^rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating and MWO.

Features

Maximum Junction Temperature : T_J= 175°C
Positive Temperature Co-efficient for Easy Parallel Operating
High Current Capability
Low Saturation Voltage: V_CE(sat) = 1.45 V ( Typ.) @ I_C= 40 A
100% of the Parts tested for I_LM(1)
High Input Impedance
Fast Switching
Tighten Parameter Distribution
RoHS Compliant

Material Composition

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)CES Typ (V)

I_C Max (A)

V_CE(sat) Typ (V)

V_F Typ (V)

E_off Typ (mJ)

E_on Typ (mJ)

T_rr Typ (ns)

I_rr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

E_AS Typ (mJ)

P_D Max (W)

Co-Packaged Diode

Pricing ($/Unit)

FGA40T65SHDF

Last Shipments

TO-3P-3L

340BZ

TUBE

450

650

1.45

1.5

0.44

1.22

238

268

Yes

Price N/A

Product Number:

Distributor		Stock	BUY

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IGBTs | FGA40T65SHDF

IGBT, 650 V, 40 A Field Stop Trench

Overview

Availability & Samples (size)

Email Sales