IGBT - Automotive Grade 1200 V 25 A

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Overview

AEC Q101 qualified Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop VII Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss offers optimum performance for both hard and soft switching topology in automotive application.

  • HEV-EV PTC heater
  • HEV-EV e-compressor
  • Electric vehicles
  • Hybrid electric vehicles
  • AEC Q101 qualified
  • Tight Parameter distribution
  • Low Vcesat
  • Low Eoff & Eon

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Product

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

AFGHL25T120RW

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

F

-

1200

25

1.38

~NA~

~NA~

~NA~

~NA~

~NA~

113

6

~NA~

405

No

$3.5839

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