General Purpose and Low VCE(sat) Transistors | FJB102

100V High Voltage Power Darlington Transistor

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Overview

  • This product is general usage and suitable for many different applications.
  • High DC Current Gain : hFE=1000 @ VCE= 4 V, IC= 3 A (Min.)
  • Low Collector-Emitter Saturation Voltage
  • High Collector-Emitter Sustaining Voltage
  • Monolithic Construction with Built-in Base-Emitter Shunt Resistors
  • Industrial Use

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MSL Temp (°C)

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ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

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FJB102TM

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CAD Model

Pb

A

H

P

D2PAK-3 / TO-263-2

418AJ

1

245

REEL

800

No

NPN

High-Voltage Power Transistor

2.5

8

100

100

5

-

2.8

200

20000

-

80

10.16 x 15.24 x 4.45

$0.4643

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Reliability Data

Die Related Summary Data

Device: FJB102TM

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

22

2464763921

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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