High Power NPN Bipolar Transistor

Obsolete

Overview

The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

  • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
  • Pb-Free Packages are Available

Tools and Resources

Product services, tools and other useful resources related to BD809

Product List

If you wish to buy products or product samples, please log in to your onsemi account.

Search

Close Search

Products:

2

Share

Product Groups:

Orderable Parts:

2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BD809

Loading...

Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

-

General Purpose

1.1

10

-

-

-

-

-

30

-

1.5

90

Price N/A

More Details

BD809G

Loading...

Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

NPN

General Purpose

1.1

10

80

80

5

-

1.6

30

-

1.5

90

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

Support on the go

Find and compare products, get support and connect with onsemi sales team.