2N3055: 15 A, 60 V NPN Bipolar Power Transistor

Datasheet: Complementary Silicon Power Transistors
Rev. 6 (70.0kB)
Product Overview
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Product Change Notification
The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.
Features
 
  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Case Outlines
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
2N3055G Active
Pb-free
2N3055 TO-204-2 1-07 NA Tray Foam 100 $2.2473
Market Leadtime (weeks) : Contact Factory
FutureElectronics   (2020-08-19 00:00) : <1K
Avnet   (2020-08-19 00:00) : <100

Product
Description
Pricing ($/Unit)
Compliance
Status
Polarity
Type
VCE(sat) Max (V)
IC Cont. (A)
VCEO Min (V)
VCBO (V)
VEBO (V)
VBE(sat) (V)
VBE(on) (V)
hFE Min
hFE Max
fT Min (MHz)
PTM Max (W)
Package Type
2N3055G  
 $2.2473 
Pb
 Active   
NPN
General Purpose
1.1
3
15
60
100
7
-
1.5
20
70
2.5
115
TO-204-2
Case Outlines
1-07   
Packages
2N3055: 15 A, 60 V NPN Bipolar Power Transistor
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