Darlington Transistors | TIP142T

10 A, 100 V NPN Epitaxial Darlington Power Bipolar Junction Transistor

Obsolete

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Overview

10 A, 100 V NPN Epitaxial Darlington Power Bipolar Junction Transistor. 

  • This product is general usage and suitable for many different applications.

  • Monolithic Construction with Built In Base-Emitter Shunt Resistors
  • High DC Current Gain: hFE=1000 @ VCE= 4 V, IC= 5 A (Min.)
  • Industrial Use
  • Complement to TIP145T/146T/147T

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Package Type

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MSL Type

MSL Temp (°C)

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ON Target

Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

TIP142T

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

BLKBG

1200

N

NPN

10

100

2

1

~NA~

~NA~

Price N/A

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TIP142TTU

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

NPN

10

100

2

1

~NA~

~NA~

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: TIP142TTU

Equivalent to wafer fab process: TM

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

TM

21

1953855815

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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