BDX53B: Medium Power NPN Darlington Bipolar Power Transistor

Datasheet: Plastic Medium-Power Complementary Silicon Transistors
Rev. 15 (109kB)
Product Overview
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Product Change Notification
The 8 A, 100 V, 65 W PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX53B, BDX53C, BDX54B and BDX54C are complementary devices.
Features
 
  • High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc
  • Collector Emitter Sustaining Voltage @ 100 mAdc
    VCEO(sus) = 80 Vdc (Min) BDX53B, 54B
    VCEO(sus) = 100 Vdc (Min) - BDX53C, 54C
  • Low Collector-Emitter Saturation Voltage
    VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
    VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • TO-220AB Compact Package
  • Pb-Free Packages are Available
Availability & Samples
Specifications
Case Outlines
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
BDX53BG Active
Pb-free
BDX53B TO-220-3 221A-09 NA Tube 50 $0.4039
BDX53B Obsolete
BDX53B TO-220-3 221A-09 NA Tube 50  
Market Leadtime (weeks) : 2 to 4
ON Semiconductor   (2020-09-02 00:00) : 2,050
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
Polarity
IC Continuous (A)
V(BR)CEO Min (V)
VCE(sat) Max (V)
hFE Min (k)
hFE Max (k)
fT Min (MHz)
Package Type
BDX53BG  
 $0.4039 
Pb
 Active   
NPN
8
80
2
0.75
-
-
TO-220-3
Case Outlines
221A-09   
Packages
BDX53B: Medium Power NPN Darlington Bipolar Power Transistor
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