Solar Solutions Energy Storage DC Fast EV Charging UPS
Solar Solutions Energy Storage DC Fast EV Charging UPS
Energy Infrastructure Evolution

We understand your design challenges and help you to tackle them along the way.

Complete End-to-End Supply Chain

Learn more about our full control of the SiC manufacturing value chain.

Solutions

onsemi leverages decades of experience in innovative technologies, reliable, highly efficient and quality of next-gen power semiconductors to shorten your development time while exceeding your power density and beating power loss budgets. We are helping you and your manufacturing team sleep better at night knowing you have helped make the world a better place.

Faster Switching More Compact End-Product

1200V M3S SiC MOSFETs provide up to 20% power loss reduction in hard switching applications compared to industry leading competition

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Full SiC & Hybrid SiC Modules

Our package technologies are optimized for superior performance, lower thermal resistance than discrete devices, and easy mounting packages that fit industry standard pinouts.

Hybrid Modules Full SiC Modules

Physical, Scalable SPICE Models to Accurately Predict Your Design Reality

Did you know that all SPICE Modelling is Not the same? Our SPICE models will take your simulation results to the next level, accelerating time to market.

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If you're interested to learn about any onsemi technology, search for related articles in help library.

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EliteSiC Diode Families

Family

Voltages

Optimization

Best Application

650 V, 1200 V, 1700 V

Large die size so low RTH and highest surge current ratings

  • Vienna rectifier input stages

More Details

650 V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

1200 V

High-speed switching with low Vf

  • PFC Stages
  • Output Rectification

More Details

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EliteSiC MOSFET Families

Family

Voltages

Optimization

Best Application

1200 V, 1700 V

Large die size so low RTH


Balance between switching losses and conduction losses

  • DC-DC solid state relays
  • Traction & motor drives
  • Hard switching applications

More Details

650 V, 750 V, 1200 V

Lowest RDS(ON) for low speed applications

  • DC-DC solid state relays
  • Traction & motor drives

More Details

1200 V

Fast switching applications with 15V-18V gate drive

  • Hard switching applications
  • LLC resonant applications

More Details

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Technical Documents

Technical Advantages of onsemi's New Elite Power Simulator and Self-Service PLECS Model Generator

The purpose of this application note is to explain the technical advantages included in the online Elite Power Simulator and Self-Service PLECS Model Generator

Designing DC Fast Charges (DCFC) for Efficiency, Reliability, and Safety

This paper will explain key DCFC design considerations and architectures to provide the highest efficiency, reliability, and performance

Common IGBT Topologies Used in Energy Infrastructure Applications

We are now experiencing a period of explosive growth in the EV market. According to EV volume, a total of 10.5 million new BEVs and PHEVs were delivered during 2022

Energy Storge System Solutions

More and more countries and companies have announced their strategies for achieving a low-carbon, sustainable world

Power Supply Solutions

In this paper, we will cover power supply basics along with onsemi's system level simulation tools, featured products, and evaluation board.

Thermal Management in Silicon Carbide (SiC) Designs

This paper describes thermal management implications and the total cost of sic-based power systems

Thermal Calculations for IGBTs

This application note will explain, in simple terms, how to measure the power and calculate the temperature rise of the diode and IGBT chips

IGBT Basics

This paper intends to discuss the characteristics of IGBT and some issues to consider in designing a gate drive as well as the issues to consider

Effect of Gate-Emitter Voltage on Turn on Losses and Short Circuit Capability

This application note describes some of the impacts of the gate-emitter voltage on the IGBT device performance.

SiC Simulations

In this paper, we will focus more on results obtained only through simulation and how to use the results in some high-power conversion topologies

Using Physical and Scalable Simulation Models to Evaluate Parameters and Application Results

Physical and scalable modeling technique is an advanced SPICE modeling approach based on process and layout parameters which enables design optimization through a direct link between SPICE, physical design, and process technology.

Reliability and Quality for IGBTs

In today’s semiconductor marketplace two important elements for the success of a company are product quality and reliability.

Engineering Essentials: Choosing Between Digital Isolators or Optocouplers

As energy demand expands, current and voltage values also rise. Higher voltages are more common in many applications, even in standalone applications.

Mounting Instructions for PIM Modules (Q0, Q1, Q2, F1, F2)

This application note covers the mounting instructions for onsemi Power Integrated Modules (PIMs) using the following packages: Q0, Q1, Q2, F1, F2.

High Efficiency DC-DC Converter Module

The NCP12700 is fixed frequency, peak current mode PWM controller for single-ended switch mode power supplies (SMPS).

Reading onsemi IGBT Datasheets

The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating.

Standard Gate-Driver Optocouplers

The FOD31xx family of gate drivers functions as a power buffer to control the gate of a power MOSFET or IGBT.

MOSFET Basics

The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power Metal Oxide Semiconductor Field Effect Transistor (MOSFET).

onsemi M 1 1200 V SiC MOSFETs & Modules: Characteristics and Driving Recommendations

This paper provides an overview on the key characteristics of onsemi M 1 1200 V SiC MOSFETs and how they can be influenced by the driving conditions. As part of the full wide bandgap ecosystem that onsemi offers, this article also provides a guideline on the usage of an isolated gate driver for SiC MOSFETs.

Galvanic Isolation Gate Driver Design Tips

This application note describes some parameters, functions, and design tips of onsemi’s galvanic isolation gate drivers in system application.

Physically Based, Scalable SPICE Modeling Methodologies for Modern Power Electronic Devices

This paper describes how onsemi’s physically based, scalable SPICE models will take your simulation results to the next level, as a result, shorten your time to market.

SiC MOSFETs: Gate Drive Optimization

This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance and system level considerations will also be discussed.

Power Packages Heat Sink Mounting Guide

This document provides guidelines for mounting heat sinks for the proper thermal management. We describe heat-sink mounting methods, considerations, contact thermal resistance, and mounting torque for various packages.

A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

SiC MOSFETs have become a real alternative to using IGBTs in power applications. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC by providing reliable control over IGBT and MOSFET. This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

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