Si/SiC Hybrid Module - EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package

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Overview

The NXH350N100H4Q2 is a power integrated module (PIM) containing a single I-type NPC stage containing 100 A, 1200 V EliteSiC diodes for the neutral point clamps, 350 A, 1000 V IGBTs for the outer IGBTs and 400 A, 1000 V IGBTs for the inner IGBTs. The inverse diodes for the IGBTs are specified at 170 A for switching. An on-board thermistor is included.

  • DC-AC Conversion in 1500V system
  • 1500V Decentralized Utility Solar Inverters
  • 1500V Energy Storage Systems
  • Module with low thermal impedance baseplate
  • Solder and press-fit options
  • 1000V low VCE(sat) IGBTs and 1200V SiC diode optimized combination for DC-AC conversion

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Reference Price

NXH350N100H4Q2F2P1G

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Active

CAD Model

Pb

A

H

P

Q2

NA

0

BTRAY

36

F

I-Type

1000

375

1.63

1.5

$138.8267

More Details

NXH350N100H4Q2F2S1G

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Active

CAD Model

Pb

A

H

P

Q2

NA

0

BTRAY

36

F

I-Type

1000

375

1.63

1.5

$142.1392

More Details

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