IGBT, 1200 V Field Stop II, 50 A

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO-247-4L, package that provides significant reduction in Eon Losses compared to standard TO-247-3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Neutral Point Clamp Topology
  • Industrial
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Improved Gate Control Lowers Switching Losses
  • Separate Emitter Drive Pin
  • TO-247-4L for Minimal Eon Losses
  • Optimized for High Speed Switching
  • These are Pb-Free Devices

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

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Irr Typ (A)

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Co-Packaged Diode

Reference Price

NGTB50N120FL2WAG

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Obsolete

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

30

N

-

1200

50

2.25

2.18

1.4

2.15

281

17

313

-

-

536

Yes

Price N/A

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