IGBT, 600V, SMPS

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Overview

The HGTP3N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

  • Other Industrial
  • Uninterruptible Power Supply
  • 8A, 600V @ TC = 110°C
  • Low Saturation Voltage : V CE(sat) = 2.0 V @ I C = 3A
  • Typical Fall Time. . . . . . . . . . 70ns at TJ = 125°C
  • Low Conduction Loss

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

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HGTP3N60A4

Last Shipments

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

600

8

2

-

0.025

0.037

-

-

21

-

12

70

No

Price N/A

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