IGBTs | HGTP3N60A4

IGBT, 600V, SMPS

Obsolete

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Overview

The HGTP3N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

  • Other Industrial
  • Uninterruptible Power Supply

  • 8A, 600V @ TC = 110°C
  • Low Saturation Voltage : V CE(sat) = 2.0 V @ I C = 3A
  • Typical Fall Time. . . . . . . . . . 70ns at TJ = 125°C
  • Low Conduction Loss

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MSL Temp (°C)

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V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

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Co-Packaged Diode

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HGTP3N60A4

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

-

600

8

2

-

0.025

0.037

-

-

21

-

12

70

No

Price N/A

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Reliability Data

Die Related Summary Data

Device: HGTP3N60A4

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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