Overview

The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter and power supplies.

  • Energy Generation & Distribution
  • 30A, 600V, TC= 110°C
  • Low saturation voltage: VCE(sat) = 1.45V @ IC = 30A
  • Typical Fall Time. . . . . . . . 90ns at TJ= 150°C
  • Short Circuit Rating
  • Low Conduction Loss

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

HGTG30N60B3

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Obsolete

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

-

600

30

1.45

-

0.68

0.5

-

-

170

-

100

208

No

Price N/A

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