IGBT, 600V, SMPS

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Overview

The HGTG30N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

  • Other Industrial
  • 60A, 600V @ TC = 110°C
  • Low Saturation Voltage : V CE(sat) = 1.8 V @ I C = 30A
  • Typical Fall Time. . . . . . . . . . 58ns at TJ = 125°C
  • Low Conduction Loss

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

HGTG30N60A4

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Last Shipments

CAD Model

Pb

A

H

P

TO-247-3

NA

0

TUBE

450

N

-

600

60

1.8

-

0.24

0.28

-

-

225

-

-

463

No

Price N/A

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