IGBTs | HGTG20N60B3

600V, PT IGBT

Obsolete

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Overview

The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

  • Other Industrial

  • 40A, 600V at TC = 25°C
  • 600V Switching SOA Capability
  • Typical Fall Time: 140ns at 150°C
  • Short Circuit Rated
  • Low Conduction Loss

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HGTG20N60B3

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-247-3

340CK

NA

0

TUBE

450

N

-

600

20

1.8

-

-

-

-

-

-

-

-

-

No

Price N/A

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Reliability Data

Die Related Summary Data

Device: HGTG20N60B3

Equivalent to wafer fab process: IGBT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

IGBT

1

2930462991

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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