IGBT, Field Stop IV/4 Lead

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Overview

This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop IV Trench construction, and providessuperior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. In addition, this new device is packaged in a TO−247−4L package that provides significant reduction in Eon Losses compared to standard TO−247−3L package. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged freewheeling diode with a low forward voltage.

  • Solar Inverter
  • Uninterruptible Power Inverter Supplies
  • Neutral Point Clamp Topology
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Improved Gate Control Lowers Switching Losses
  • Separate Emitter Drive Pin
  • TO-247-4L for Minimal Eon Losses
  • Optimized for High Speed Switching
  • These are Pb-Free Devices

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGH75T65SQDNL4

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Active

CAD Model

Pb

A

H

P

TO-247-4

NA

0

TUBE

450

Y

-

650

75

1.43

1.6

1.26

1.25

134

10

128

-

-

375

Yes

$4.3126

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