IGBT, 600V, 3A, 1.2V, DPAK, Planar

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Overview

ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.

  • High Current Capability
  • Very Low Saturation Voltage : VCE(sat) = 1.2 V at IC = 3 A
  • High Input Impedance

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2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGD3N60LSDTM

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Lifetime

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

-

600

6

1.2

1.5

1

0.25

234

2.64

12.5

-

-

40

Yes

$0.4457

More Details

FGD3N60LSDTM-T

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Obsolete

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

-

600

6

-

1.5

1.9

0.3

234

2.64

12.5

-

-

40

-

Price N/A

More Details

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