IGBTs | FGD3N60LSD

IGBT, 600V, 3A, 1.2V, DPAK, Planar

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Overview

onsemi's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.

  • High Current Capability
  • Very Low Saturation Voltage : VCE(sat) = 1.2 V at IC = 3 A
  • High Input Impedance

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGD3N60LSDTM

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Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-

600

6

1.2

1.5

1

0.25

234

2.64

12.5

-

-

40

Yes

$0.4457

More Details

FGD3N60LSDTM-T

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

-

600

6

-

1.5

1.9

0.3

234

2.64

12.5

-

-

40

-

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: FGD3N60LSDTM

Equivalent to wafer fab process: 3B,IL

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

3B,IL

1

1920107056

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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