FGD3N60LSD

IGBT, 600V, 3A, 1.2V, DPAK, Planar

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CAD Model

Overview

ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.

Features

High Current Capability
Very Low Saturation Voltage : V_CE(sat) = 1.2 V at I_C = 3 A
High Input Impedance

Material Composition

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

V_(BR)CES Typ (V)

I_C Max (A)

V_CE(sat) Typ (V)

V_F Typ (V)

E_off Typ (mJ)

E_on Typ (mJ)

T_rr Typ (ns)

I_rr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

E_AS Typ (mJ)

P_D Max (W)

Co-Packaged Diode

Pricing ($/Unit)

FGD3N60LSDTM

Active

DPAK-3 / TO-252-3

369AS

260

REEL

2500

600

1.2

1.5

0.25

234

2.64

12.5

Yes

$0.4457

FGD3N60LSDTM-T

Obsolete

DPAK-3 / TO-252-3

369AS

260

REEL

2500

600

1.5

1.9

0.3

234

2.64

12.5

Price N/A

Product Number:

Distributor		Stock	BUY

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IGBTs | FGD3N60LSD

IGBT, 600V, 3A, 1.2V, DPAK, Planar

Overview

Availability & Samples (size)

Email Sales