IGBT, 650 V, 60 A Field Stop Trench

Obsolete

Overview

This ADF IGBT series adopted Field Stop Trench 3rd generation IGBT which offer extreme low Rds(on) and much faster switching characteristics for outstanding efficiency. And this kind of technology is fully optimized to variety PFC (Power Factor Correction) topology ; Single boost, Multi channel interleaved etc with over 20KHz switching performance. TO3P package provide Super Low thermal resistance for much wider SOA for system stability.

  • Maximum Junction Temperature : TJ = 175 °C
  • Positive Temperaure Co-efficient for Easy Parallel Operating
  • High Current Capability
  • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A
  • 100% of the Parts Tested for ILM (1)
  • High Input Impedance
  • Fast Switching
  • RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Family

V(BR)CES Typ (V)

IC Max (A)

VCE(sat) Typ (V)

VF Typ (V)

Eoff Typ (mJ)

Eon Typ (mJ)

Trr Typ (ns)

Irr Typ (A)

Gate Charge Typ (nC)

Short Circuit Withstand (µs)

EAS Typ (mJ)

PD Max (W)

Co-Packaged Diode

Reference Price

FGA6065ADF

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Obsolete

CAD Model

Pb

A

H

P

TO-3P-3L

NA

0

TUBE

450

N

-

650

60

1.8

1.8

0.52

2.46

271

-

84

-

-

306

No

Price N/A

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