FGA40N65SMD: IGBT, 650V, 40A, Field Stop

Datasheet: FGA40N65SMD-D.pdf
Rev. A (1280kB)
Product Overview
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Product Change Notification
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
 
  • Maximum junction temperature : TJ =175 °C
  • Positive temperature co-efficient for easy parallel operating
  • High current capability
  • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A
  • Fast switching: EOFF =6.5uJ/A
  • Tightened parameter distribution
  • RoHS compliant
Applications
  • Energy Generation & Distribution
  • Uninterruptible Power Supply
  • Other Industrial
Technical Documentation & Design Resources
Simulation Models (1) Package Drawings (1)
Data Sheets (1)  
Availability & Samples
Specifications
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
FGA40N65SMD Active
Pb-free
FGA40N65SMD TO-3P-3L 340BZ NA Tube 450 $1.5255
Market Leadtime (weeks) : Contact Factory

Product
Description
Pricing ($/Unit)
Compliance
Status
V(BR)CES Typ (V)
IC Max (A)
VCE(sat) Typ (V)
VF Typ (V)
Eoff Typ (mJ)
Eon Typ (mJ)
Trr Typ (ns)
Irr Typ (A)
Gate Charge Typ (nC)
Short Circuit Withstand (µs)
EAS Typ (mJ)
PD Max (W)
Co-Packaged Diode
Package Type
FGA40N65SMD  
 $1.5255 
Pb
 Active   
650
40
1.9
2.1
0.26
0.34
200
3.6
119
-
-
349
Yes
TO-3P-3L
Case Outlines
340BZ   
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