Hybrid IGBT, 650V, 50A Fieldstop 4 trench IGBT with SiC-SBD

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Overview

Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.

  • Automotive
  • Industrial Inverter
  • DC-DC Converter
  • PFC, Totem Pole Bridgeless
  • Hard Switching
  • xEV On & Off board charger
  • UPS
  • Solar Inverter
  • HVAC
  • Copacked with SiC schottky barrier diode
  • Automotive Qualified
  • Maximum Junction Temperature, Tj=175°C
  • Very low switching and conduction losses
  • Positive temperature co-efficient
  • 100% of the parts are dynamically tested
  • Tight parameter distribution

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V(BR)CES Typ (V)

IC Max (A)

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Irr Typ (A)

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Co-Packaged Diode

Reference Price

AFGHL50T65SQDC

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Active

CAD Model

Pb

A

H

P

TO-247-3LD

NA

0

TUBE

450

Y

-

650

50

1.6

1.45

-

-

-

-

94

-

-

-

Yes

$5.9999

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