NPN Epitaxial Silicon Darlington Transistor

Obsolete

Overview

  • This product is general usage and suitable for many different applications.

  • Monolithic Construction with Built In Base-Emitter Shunt Resistors
  • Complementary to TIP115/116/117
  • High DC Current Gain: hFE=1000 @ VCE= 4 V, IC= 1 A (Min.)
  • Low Collector-Emitter Saturation Voltage
  • Industrial Use

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

TIP111TU

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

BLKBG

1200

N

NPN

General Purpose

2.5

2

80

80

5

-

2.8

500

-

-

2

Price N/A

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