General Purpose and Low VCE(sat) Transistors | MJE200(LEGACY FAIRCHILD)

5.0 A, 25 V NPN Bipolar Power Transistor

Obsolete

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Overview

The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.

  • Collector-Emitter Sustaining Voltage -
    VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain -
    hFE = 70 (Min) @ IC = 500 mAdc
    hFE = 45 (Min) @ IC = 2.0 Adc
    hFE = 10 (Min) @ IC = 5.0 Adc
  • Low Collector-Emitter Saturation Voltage -
    VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
    VCE(sat) = 0.75 Vdc (Max) @ IC = 2.0 Adc
  • High Current-Gain - Bandwidth Product -
    fT = 65 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakage -
    ICBO = 100 nAdc @ Rated VCB
  • Pb-Free Packages are Available

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Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

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MJE200STU

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Obsolete

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CAD Model

Pb

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