General Purpose and Low VCE(sat) Transistors | BD810

High Power PNP BipolarTransistor

Obsolete

Datasheet

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Overview

The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

  • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
  • Pb-Free Packages are Available

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Product services, tools and other useful resources related to BD810

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Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BD810

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

1.1

10

80

-

-

-

-

30

-

1.5

90

Price N/A

More Details

BD810G

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

50

N

PNP

General Purpose

1.1

10

80

80

5

-

1.6

30

-

1.5

90

Price N/A

More Details

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Reliability Data

Die Related Summary Data

Device: BD810G

Equivalent to wafer fab process: BPT

Product Technology

Product Technology

Equivalent Device-Hours

MTBF/MTTF in Hours

FITS

BPT

8

3017145632

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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