High Power PNP BipolarTransistor

Obsolete

Overview

The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

  • DC Current Gain - hFE = 30 (Min) @ IC = 2.0 Adc
  • Pb-Free Packages are Available

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2

Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

BD810

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

PNP

General Purpose

1.1

10

80

-

-

-

-

30

-

1.5

90

Price N/A

More Details

BD810G

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

50

N

PNP

General Purpose

1.1

10

80

80

5

-

1.6

30

-

1.5

90

Price N/A

More Details

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