General Purpose and Low VCE(sat) Transistors | 2N3055H

Transistor Silicon Power NPN

Obsolete

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Overview

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Reference Price

2N3055H

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

-

General Purpose

-

-

-

-

-

-

-

20

70

2.5

115

Price N/A

More Details

2N3055HG

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Obsolete

Similar Products
CAD Model

Pb

A

H

P

TO-204-2

1-07

NA

0

FTRAY

100

N

-

General Purpose

-

-

-

-

-

-

-

20

70

2.5

115

Price N/A

More Details

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