Transistor Silicon Power NPN

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Overview

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available

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Product

Status

ECAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Polarity

Type

VCE(sat) Max (V)

IC Cont. (A)

VCEO Min (V)

VCBO (V)

VEBO (V)

VBE(sat) (V)

VBE(on) (V)

hFE Min

hFE Max

fT Min (MHz)

PTM Max (W)

Pricing ($/Unit)

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2N3055HG

Obsolete

Pb

A

H

P

TO-204-2

NA

0

FTRAY

100

N

-

General Purpose

-

-

-

-

-

-

-

20

70

2.5

115

Price N/A

More Details

2N3055H

Obsolete

Pb

A

H

P

TO-204-2

NA

0

FTRAY

100

N

-

General Purpose

-

-

-

-

-

-

-

20

70

2.5

115

Price N/A

More Details

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