2N3055H

Transistor Silicon Power NPN

Overview

The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.

Features

DC Current Gain - h_FE = 20-70 @ I_C = 4 Adc
Collector-Emitter Saturation Voltage - V_CE(sat) = 1.1 Vdc (Max) @ I_C = 4 Adc
Excellent Safe Operating Area
Pb-Free Packages are Available

Material Composition

Product Change Notification

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

Polarity

Type

V_CE(sat) Max (V)

I_C Cont. (A)

V_CEO Min (V)

V_CBO (V)

V_EBO (V)

V_BE(sat) (V)

V_BE(on) (V)

h_FE Min

h_FE Max

f_T Min (MHz)

P_TM Max (W)

Pricing ($/Unit)

2N3055HG

Obsolete

TO-204-2

1-07

FTRAY

100

General Purpose

2.5

115

Price N/A

2N3055H

Obsolete

TO-204-2

1-07

FTRAY

100

General Purpose

2.5

115

Price N/A

Product Number:

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General Purpose and Low VCE(sat) Transistors | 2N3055H

Transistor Silicon Power NPN

Overview

Availability & Samples (size)

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