2N3055H: Transistor Silicon Power NPN

Datasheet: Complementary Silicon Power Transistors
Rev. 6 (70.0kB)
Product Overview
View Material Composition
Product Change Notification
The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.
Features
 
  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available
Technical Documentation & Design Resources
Simulation Models (4) Package Drawings (1)
Data Sheets (1)  
Product
Status
Compliance
Description
Package
MSL
Container
Budgetary Price/Unit
Type
Case Outline
Type
Temperature
Type
Qty.
2N3055HG Obsolete 
Pb-free
2N3055H TO-204-2 1-07 NA Tray Foam 100  
2N3055H Obsolete
2N3055H TO-204-2 1-07 NA Tray Foam 100  
Market Leadtime (weeks) : Contact Factory
Market Leadtime (weeks) : Contact Factory
Case Outlines
1-07   
Packages
2N3055H: Transistor Silicon Power NPN
Previously Viewed Products
Clear List

Your request has been submitted for approval.
Please allow 2-5 business days for a response.
You will receive an email when your request is approved.
Request for this document already exists and is waiting for approval.