4.0 A, 40 V PNP Darlington Bipolar Power Transistor

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Overview

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

  • High DC Current Gain -
    hFE = 2000 (Typ) @ IC = 2.0 Adc
  • Collector-Emitter Sustaining Voltage - @ 100 mAdc
    VCEO(sus) = 60 Vdc (Min) - 2N6035, 2N6038
    VCEO(sus) = 80 Vdc (Min) - 2N6036, 2N6039
  • Forward Biased Second Breakdown Current Capability
    IS/b = 1.5 Adc @ 25 Vdc
  • Monolithic Construction with Built-in Base-Emitter
    Resistors to Limit Leakage Multiplication
  • Space-Saving High Performance-to-Cost Ratio
    TO-225AA Plastic Package
  • Pb-Free Packages are Available

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CAD Models

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

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Polarity

IC Continuous (A)

V(BR)CEO Min (V)

VCE(sat) Max (V)

hFE Min (k)

hFE Max (k)

fT Min (MHz)

Reference Price

2N6034

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

500

N

PNP

4

40

2

0.75

15

25

Price N/A

More Details

2N6034G

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Obsolete

CAD Model

Pb

A

H

P

TO-225-3

NA

0

BLKBX

500

N

PNP

4

40

2

0.75

15

25

Price N/A

More Details

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