onsemi Wins Top Spots at the ASPENCORE World Electronics Achievement Awards and EE Awards Asia

December 02, 2021

Awards recognize innovative technologies and industry leadership

Dec. 1, 2021 – onsemi (Nasdaq: ON), a leader in intelligent power and sensing technologies, announced that its NCP51561 isolated SiC MOSFET gate driver has won the ASPENCORE World Electronics Achievement Award (WEAA) in the Power semiconductor/Driver category. The WEAA program recognizes companies and individuals who have made outstanding contributions to the innovation and development of the electronics industry worldwide. The winners were selected by ASPENCORE analysts and its global user community.

onsemi also announced wins at the EE Awards Asia, with its Transfer-Molded Power Integrated Modules (TM-PIMs) capturing the Power IC Product category, and its innovative automotive solutions and portfolio of intelligent power products winning the coveted EV Power Semiconductor Supplier Award. EE Awards Asia celebrates some of the best products, companies, and industry executives making a difference every day in Asia's electronics industry.

The WEAA-award winning NCP51561 is an isolated dual-channel gate driver with 4.5 A source and 9 A sink peak current capability. The new device is suitable for fast switching of silicon power MOSFETs and SiC-based MOSFET devices, offering short and matched propagation delays. Two independent and 5 kVRMS (UL1577 rated) galvanically isolated gate driver channels can be used as two low-side, two high-side switches or a half-bridge driver with programmable dead time. An enable pin will shut down both outputs simultaneously and the NCP51561 offers other important protection functions such as independent under-voltage lockout (UVLO) for both gate drivers and the enable function.

The EE Awards Asia EV Power Semiconductor Supplier Award recognized the leadership position of onsemi in providing innovative vehicle electrification solutions, based on 50 years of technical knowledge and a wealth of customer experience. The company’s commitment to providing more technically flexible and complete hardware platforms to add value to the design and verification efforts of customers was also an important factor.

Motor drive systems are becoming essential in applications such as industrial automation and robotics, and require energy efficiency, precise measurement, accurate control, and high reliability within harsh industrial environments. The EE Awards Asia-winning NXH25C120L2C2, NXH35C120L2C2/2C2E and NXH50C120L2C2E TM-PIMs are integrated with converter–inverter- brake/power factor correction circuit and designed for 650 V/1200 V 25 A~50 A single-phase and 3-phase motor drive applications. The disruptive transfer mold process and thick copper substrate chosen can deliver high power at much smaller size than conventional gel-filled power integrated module, as well as featured as 10-fold increase of the temperature cycling lifetime and hermetic suitable to work in certain humid or corrosive environments.

About onsemi

onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. onsemi offers a highly differentiated and innovative product portfolio, delivering intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way to creating a safer, cleaner and smarter world. onsemi is recognized as a Fortune 500® company and included in the Nasdaq-100 Index® and S&P 500® index. Learn more about onsemi at www.onsemi.com.


onsemi and the onsemi logo are trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the Company references its website in this news release, information on the website is not to be incorporated herein.

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