ON Semiconductor Launches Automotive-Qualified Self Protected Low-Side Driver ICs

NCV840x family of devices in SOT-223, DPAK and SOIC8 packaging provides robust and reliable drive functionality in harsh automotive and industrial environments

low-side protected MOSFET photo

PHOENIX, Ariz. – Dec. 11, 2009 – ON Semiconductor (Nasdaq: ONNN)  a leading global supplier of high performance, energy efficient silicon solutions, today introduced a family of low-side protected MOSFETs that feature high levels of integrated protection. Qualified in accordance with the AEC-Q101 standard, devices in the NCV840x family are ideal for use in switching applications operating in harsh automotive and industrial environments.

Designed for robust and reliable operation, the NCV8401, NCV8402, NCV8402D (dual die), NCV8403 and NCV8405 all have an extensive range of self-protection features. These include temperature and current limiting, electrostatic discharge (ESD) protection, and integrated drain-to-gate clamping for overvoltage protection.

“With the amount of electronic content in vehicles continuing to increase, there is a need to offer semiconductor solutions that can help reduce component count and save valuable space,” said Jim Alvernaz, director of Automotive Power products at ON Semiconductor. “The NCV840x family will help designers to achieve this while delivering system designs that are rugged enough to cope with harsh automotive environments.” 

Features and Benefits
NCV840x drivers can be used to switch a variety of resistive, inductive and capacitive loads and allow design engineers to replace electromechanical relays or discrete circuits with an alternative that is more compact and robust and that has a longer operational life. All of the devices have a logic level input.

The NCV8401, NCV8402/D and NCV8403 have a drain-to-source voltage rating (VDSS) of 42 volts (V) and maximum drain currents (ID) of 33 amperes (A), 2 A and 15 A respectively. The NCV8405 is rated to 40 VDSS and has a maximum ID rating of 6 A. Gate-to-source voltage for all devices is ±14 V.

All members of the new family exhibit low on resistance (RDS(ON)) values that enable more energy efficient system designs. Respective RDS(ON) values ( at 10 V) are 23 milliohms (mΩ) for the NCV8401; 165 mΩ for the NCV8402/D; 53 mΩ for the NCV8403; and 90 mΩ for the NCV8405.

The devices all have a wide operating temperature range of −40 °C to 150 °C and high electro-static resistance levels (4000 V at a junction temperature of 25 °C). Turn-off temperature limit is set at 175 °C when VGS is 5 V and 165 °C when VGS is 10 V.

Packaging and Pricing
The NCV840x devices are available in a Pb-free SOT-223, DPak and SOIC8 packaging.   The NCV840x devices are priced between $0.25 to $0.58 USD per unit in 1,000 unit quantities.

For more information, please visit https://www.onsemi.com.

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