PHOENIX, Ariz. – Oct. 6, 2005 - A global supplier of discrete devices, ON Semiconductor (Nasdaq: ONNN) today introduced a new family of high performance, Vce(sat) bipolar junction transistors (BJTs) that reduce overall circuit cost while contributing to better power efficiency and longer battery life in a wide variety of portable applications - including cell phones, PDAs, media players, notebook computers and digital cameras.
These innovative low Vce(sat) BJTs are miniature surface mount devices featuring ultra-low saturation voltage (Vce(sat)) and high current gain capability. They are designed for use in low voltage, high-speed switching applications where affordable yet energy-efficient control is important. Ideal applications include power management, battery charging, low drop out regulation, vibrator motors, LED backlight, battery management, disk drive control and camera flash.
To assist portable and wireless product manufacturers - who are under tremendous pressure to squeeze costs out of every aspect of their designs - ON Semiconductor looked beyond analog ICs to discrete components for potential cost savings. By applying improved silicon technology and advanced packaging, the company developed this new series of small, cost-effective BJTs that deliver low saturation voltage performance equivalent to the Rds(on) performance of more expensive discrete solutions.
“We have helped some of our customers realize a 10-cents-per-circuit cost savings by implementing the new Low Vce(sat) BJTs,” said Wes Reid, ON Semiconductor’s product line marketing manager for the Small Signal Division. “ON Semiconductor’s engineering team is also rapidly developing the next generation of low Vce(sat) BJT devices that will reduced equivalent Rds(on) by another 50 percent, making this cost-saving technology available to more customers and their applications.”
ON Semiconductor’s new Vce(sat) BJTs offer high electrostatic discharge (ESD) tolerance which assists in protecting sensitive components from damage. Superior electrical performance and a low temperature coefficient work to improve power efficiency and ultimately conserve battery power. These new transistors can further reduce the overall bill of materials (BOM) by reducing part count in certain applications. For example, by delivering a low turn-on voltage of less than 1.0 volts (V) it may be possible to eliminate the typical charge pumps. They also enable the elimination of blocking diodes due to their bi-directional current blocking capability.
NSS12200WT1G 12 V, 3.0 A, 163 milliohm (SC-88)
NSS30070MR6T1G 30 V, 0.7 A, 320 milliohm (SC-74)
NSS35200CF8T1G 35 V, 7.0 A, 78 milliohm (ChipFET)
NSS40400CF8T1G 40 V, 7.0 A, 78 milliohm (ChipFET)
NSS20300MR6T1G 20 V, 5.0 A, 78 milliohm (TSOP-6)
NSS30100LT1G 30 V, 2.0 A, 200 milliohm (SOT-23)
NSS35200MR6T1G 35 V, 5.0 A, 100 milliohm (TSOP-6)
NSS20201MR6T1G 20 V, 3.0 A, 100 milliohm (TSOP-6)
NSS30101LT1G 30 V, 2.0 A, 100 milliohm (SOT-23)
NSS30071MR6T1G 30 V, 0.7 A, 200 milliohm (SC-74)
NSS30201MR6T1G 30 V, 3.0 A, 100 milliohm (TSOP-6)
Package and Price
The low Vce(sat) BJT series is available in a variety of industry leading packages, including SOT-23, SC-88, SC-74, TSOP-6 and ChipFET. They are priced between $0.07 and $0.16 per unit in 10,000 unit quantities.
For additional information about the devices and ways to implement them, visit www.onsemi.com/tech or contact Wes Reid at firstname.lastname@example.org.
About ON Semiconductor
With its global logistics network and strong portfolio of power semiconductor devices, ON Semiconductor (Nasdaq: ONNN) is a preferred supplier of power solutions to engineers, purchasing professionals, distributors and contract manufacturers in the computer, cell phone, portable devices, automotive and industrial markets. For more information, please visit ON Semiconductor’s website at www.onsemi.com.
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ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its website in this news release, such information on the website is not to be incorporated herein.