New Low Voltage Trench MOSFETs from ON Semiconductor Improve Power Circuit Efficiency and Battery-Life in Portable Products

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Eight new Trench MOSFETs – offered in tiny 1.6 mm x 1.6 mm, low profile packages - deliver 60 percent better RDS(on) than similarly packaged competitive solutions

Phoenix, Ariz. – Jan. 27, 2005 – Further expanding its portfolio of industry-leading Trench technology devices, ON Semiconductor (Nasdaq: ONNN) today introduced eight new N-channel and P-channel, low voltage Trench MOSFETs. These devices reduce resistance between drain and source (RDS(on)) to improve overall power circuit efficiency by 30 percent in portable products when compared to similarly packaged competitive solutions.

The new devices are small signal, 20 volt (V) MOSFETs specifically designed for use in -430 milliamp (mA) to -950 mA applications such as power load switches, power supply converter circuits and the battery management of cell phones, digital cameras, PDAs, pagers, media players and portable GPS systems. Utilizing ON Semiconductor’s Trench technology, these new low voltage MOSFETS boost channel length and equivalent channel density. This enables greater current conduction which delivers 60 percent lower RDS(on) than comparably packaged MOSFETs offered today.

Comparison of RDS(on) Ranges
- ON Semiconductor Trench MOSFETs: 150 – 900 mOhms
- Competitive MOSFET Devices: 850 mOhms to 1600 mOhms

Available in three tiny (1.6 mm x 1.6 mm) low profile (0.6 mm to 1.0 mm) packages, these Trench MOSFETs conserve valuable board space. Because MOSFETs are inherently susceptible to electrostatic discharge (ESD) damage - and the smaller the package the higher the risk of ESD damage – ON Semiconductor has integrated zener diodes into the gates of their Trench MOSFET to provide superior ESD protection. Overall, these packaging, performance and integration improvements work to further simplify overall board design and free-up additional board space.

“ON Semiconductor Trench technology realizes the highest channel density in the industry and delivers the best-in-class on-resistance (Rds(on)) performance for a given package footprint,” said David Garafano, ON Semiconductor general manager of Power FET Products. “By combining this Trench technology and the company’s ultra-small packaging technology, ON Semiconductor has developed a series of low voltage MOSFETs that deliver superior RDS(on), reduce power loss and improve current conduction. As such, these devices improve overall power circuit efficiency by up to 30 percent and greatly assist our customers in improving battery efficiency in their portable products.”

The Devices
- NTA4151PT1, NTE4151PT1, NTZS3151PT1, and NTZD3152PT1 are P-Channel MOSFETs for high-side load switching of up to 850 milliamps (mA). Both single and dual modes are offered.
- NTA4153NT1, NTE4153NT1 and NTZD3154NT1: These are N-Channel MOSFETs for low side load switches up to 915 mA. Both single and dual modes are offered.
- NTZD3155CT1: This is a complementary N-Channel and P-Channel combination for integrated load switching or low current dc-to-dc conversion

Packaging and Pricing
Each device is available in three low profile, 1.6 mm x 1.6 mm packages. The six-lead, 0.6 mm profile SOT-563 and the three-lead, 0.8 mm profile SC-89 are flat-lead package. The three-lead, 1.0 mm profile SC-75 is a gull-wing device. The flat-lead package provides additional thermal performance and height improvement over the industry standard gull wing package.

The devices are priced between $0.10 and $0.12 per unit in 10,000-unit quantities.

For additional technical information, visit https://www.onsemi.com/tech.

About ON Semiconductor
With its global logistics network and strong portfolio of power semiconductor devices, ON Semiconductor (Nasdaq: ONNN) is a preferred supplier of power solutions to engineers, purchasing professionals, distributors and contract manufacturers in the computer, cell phone, portable devices, automotive and industrial markets. For more information, please visit ON Semiconductor’s website at https://www.onsemi.com.

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ON Semiconductor and the ON Semiconductor logo are registered trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the company references its website in this news release, such information on the website is not to be incorporated herein.

About onsemi

onsemi (Nasdaq: ON) is driving disruptive innovations to help build a better future. With a focus on automotive and industrial end-markets, the company is accelerating change in megatrends such as vehicle electrification and safety, sustainable energy grids, industrial automation, and 5G and cloud infrastructure. With a highly differentiated and innovative product portfolio, onsemi creates intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way in creating a safer, cleaner, and smarter world.

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onsemi and the onsemi logo are trademarks of Semiconductor Components Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the Company references its website in this news release, information on the website is not to be incorporated herein.

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