ON Semiconductor 2SK3666: Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23)

Overview

Specifications

Datasheet: Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23)
Rev. 1 (393.0kB)

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»Product Change Notification (2)

Product Overview

Product Description

2SK3666 is Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23) for low-frequency,general-purpose amplifier and Impedance conversion application

Features		Benefits

Low IGSS 1.0nA MAX		High sensitive sensor module by low-leakage JFET
Low IDSS 0.6-3.0mA		Reduce power consumption by low drain current JFET

Applications
low-frequency,General-purpose Amplifier and Impedance converter

Technical Documentation & Design Resources
Data Sheets (1)

Availability and Samples

Product

Status

Compliance

Description

Package

MSL*

Container

Budgetary Price/Unit

Type

Case Outline

Type

Qty.

2SK3666-2-TB-E

Active

Pb-free

Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23), I_DSS = 0.6-1.5 mA

Tape and Reel

3000

$0.1181

Inventory

2SK3666-3-TB-E

Active

Pb-free

Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23), I_DSS = 1.2-3.0 mA

Tape and Reel

3000

$0.1181

Inventory

2SK3666-4-TB-E

Active

Pb-free

Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23)

Tape and Reel

3000

$0.1181

Moisture Sensitivity level (MSL) for surface mount devices (lead free measured at 260°C reflow, non lead free at 235°C reflow)

I_DSS Min (uA)	:	600
I_DSS Max (uA)	:	1500
V_(BR)GSS Min (V)	:	30
	:	Pb-free
Channel Polarity	:	N Channel

Market Leadtime (weeks)	:
Mouser (2013-05-21 00:00)	:	>1K

I_DSS Min (uA)	:	1200
I_DSS Max (uA)	:	3000
V_(BR)GSS Min (V)	:	30
	:	Pb-free
Channel Polarity	:	N Channel

Market Leadtime (weeks)	:
Digi-Key (2013-05-21 00:00)	:	>1K

I_DSS Min (uA)	:	2500
I_DSS Max (uA)	:	6000
V_(BR)GSS Min (V)	:	30
	:	Pb-free
Channel Polarity	:	N Channel

Market Leadtime (weeks)

Datasheet: Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23)
Rev. 1 (393.0kB)

»View Material Composition
»Product Change Notification (2)

Product Overview

Product	Compliance	Status	Description	Channel Polarity	I_DSS Min (uA)	I_DSS Max (uA)	V_(BR)GSS Min (V)
2SK3666-2-TB-E	Pb-free	Active	Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23), I_DSS = 0.6-1.5 mA	N Channel	600	1500	30
2SK3666-3-TB-E	Pb-free	Active	Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23), I_DSS = 1.2-3.0 mA	N Channel	1200	3000	30
2SK3666-4-TB-E	Pb-free	Active	Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23)	N Channel	2500	6000	30

Datasheet: Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23)
Rev. 1 (393.0kB)

»View Material Composition
»Product Change Notification (2)

Product Overview

Case Outlines

Datasheet: Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23)
Rev. 1 (393.0kB)

»View Material Composition
»Product Change Notification (2)

Product Overview

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2SK3666: Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch single CP(SOT23)