Single N-Channel Power MOSFET 60V, A, 0.68mΩ, PQFN 8x8

Overview

This N-Channel T6 60V MV MOSFET is produced using onsemi’s advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

  • Motor Control
  • DC-DC Converters
  • Battery Management/Protection
  • Power Steering/ Load Switch

  • Power Tools, E-Scooters, Drones
  • Battery Packs/ Energy Storage Units
  • Telecom, Netcom
  • Power Supplies

  • Very Low RDS(on), Shielded Gate Trench Technology
  • Low Profile PQFN 8x8 package
  • Maximum junction temperature of 175C
  • RoHS Compliant

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Product

Status

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

Vgs (V)

Vgs(th) Max (V)

ID Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTMTS0D7N06CLTXG

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Active

CAD Model

Pb

A

H

P

DFNW-8

1

260

REEL

3000

Y

N-Channel

PowerTrench® T6

Power 88

Low-Medium Voltage

Logic

0

Single

0

60

0.68

20

2.5

464

5

-

0.9

103

225

16200

20.7

307

8490

270

$1.5942

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