feedback
Rate this webpage

Need
Support?


IGBTs & FETs

IGBTs - N-Channel MOSFETs - P-Channel MOSFETs

ON Semiconductor supplies IGBTs; JFETs; N-Channel, P-Channel, and Complementary MOSFETs; and Protected MOSFETs.

Tools
 
   Interactive Block Diagrams
Interactive Block Diagram Tool graphic/button
  Ask An Expert
Ask An Expert Forum graphic/button
 
 
IGBTs  (98)
   
 

Insulated Gate Bipolar Transistors

Insulated gate bipolar transistors (IGBTs) for electronic ignition, flash, motor drive and other high current switching applications.

Technical Documentation & Design Resources
Tutorials (2) Data Sheets (104)
Application Notes (30) Package Drawings (11)
Simulation Models (26) Videos (1)
Reference Manuals (1)  
 
 
JFETs  (30)
   
 

N-Channel and P-Channel Junction Field Effect Transistors

Junction field effect transistors (JFETs) for RF, mixing and chopping circuits.
Technical Documentation & Design Resources
Application Notes (2) Data Sheets (52)
White Papers (1) Package Drawings (15)
Simulation Models (35)  
 
 
MOSFETs  (714)
   
 

N-Channel, P-Channel, and Complementary MOSFETs

N-channel and P-channel metal oxide semiconductor field effect transistors (MOSFETs) for power conversion and switching circuits.

Technical Documentation & Design Resources
Design & Development Tools (2) Data Sheets (1108)
Design Notes (1) Package Drawings (98)
Tutorials (2) Videos (2)
Application Notes (45) Evaluation Board Documents (9)
Simulation Models (2010) Evaluation/Development Tools (8)
 
 
Protected MOSFETs  (19)
   
 

SMARTDISCRETES™

Self-protected MOSFETs that may include current limiting, temperature limiting, ESD protection, or a current mirror.
Technical Documentation & Design Resources
Design Notes (1) Data Sheets (39)
Application Notes (4) Package Drawings (12)
Simulation Models (4)  
 
 
Previously Viewed Products
Clear List

New Products
 

NDUL09N150C  Power N-Channel MOSFET, 1500 V, 9 A

  • Ultra High Voltage
  • Low On-Resistance of 3.0 Ω
  • High Speed Switching

NGTB03N60R2DT4G  NGTB05N60R2DT4G  NGTB10N60R2DT4G  600 V, N-Channel IGBTs, 4.5 A, 8 A, & 10 A

  • Low Saturation Voltage: VCE(sat) = 1.6 V, High Speed Switching: tf = 70 ns
  • 5 μs Short Circuit Capability
  • High Power Dissipation/Tjmax = 175°C