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IGBTs & FETs

IGBTs - N-Channel MOSFETs - P-Channel MOSFETs

ON Semiconductor supplies IGBTs; JFETs; N-Channel, P-Channel, and Complementary MOSFETs; and Protected MOSFETs.

Tools
 
   Interactive Block Diagrams
Interactive Block Diagram Tool graphic/button
  Frequently Asked Questions
Frequently Asked Questions
 
 
IGBTs  (90)
   
 

Insulated Gate Bipolar Transistors

Insulated gate bipolar transistors (IGBTs) for electronic ignition, flash, motor drive and other high current switching applications.
Technical Documentation & Design Resources
Tutorials (2) Data Sheets (129)
Application Notes (31) Package Drawings (12)
Simulation Models (26) Videos (1)
Reference Manuals (1)  
 
 
JFETs  (27)
   
 

N-Channel and P-Channel Junction Field Effect Transistors

Junction field effect transistors (JFETs) for RF, mixing and chopping circuits.

Technical Documentation & Design Resources
Application Notes (5) Data Sheets (56)
Simulation Models (46) Package Drawings (15)
 
 
MOSFETs  (725)
   
 

N-Channel, P-Channel, and Complementary MOSFETs

N-channel and P-channel metal oxide semiconductor field effect transistors (MOSFETs) for power conversion and switching circuits.

Technical Documentation & Design Resources
Design & Development Tools (4) Data Sheets (1201)
Design Notes (1) Package Drawings (103)
Tutorials (6) Videos (5)
Application Notes (47) Evaluation Board Documents (9)
Simulation Models (2180) Evaluation/Development Tools (11)
 
 
Protected MOSFETs  (18)
   
 

SMARTDISCRETES™

Self-protected MOSFETs that may include current limiting, temperature limiting, ESD protection, or a current mirror.
Technical Documentation & Design Resources
Design Notes (1) Data Sheets (38)
Application Notes (3) Package Drawings (13)
Simulation Models (4) Videos (3)
 
 
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New Products

EFC3C001NUZ  Power MOSFET, Dual N-Channel, 20 V, 6 A

  • 2.5 V drive and common drain suitable for 1-2 cell lithium-ion battery protection
  • ESD Diode-Protected Gate
  • 30 mΩ on-state resistance reduces battery consumption

NSVJ3910SB3  N-Channel JFET, -25 V, 20 mA to 40 mA

  • High forward transfer admittance of 40 mS for reception of the small signals
  • High breakdown voltage enables robust circuit design
  • Low noise performance contributes to clear signal transmission